Synaptic Plasticity Powering Long?Afterglow Organic Light?Emitting Transistors

Long-lasting luminescence in optoelectronic devices is highly sought after for applications optical data storage and display technology. While light-emitting diodes this achieved by exploiting long-afterglow organic materials as active components, such a strategy has never been pursued transistors, which are still rather unexplored whose technological potential yet to be demonstrated. Herein, the fabrication of transistors (LAOLETs) reported operation relies on an unprecedented based photoinduced synaptic effect inorganic indium-gallium-zinc-oxide (IGZO) semiconducting channel layer, power persistent electroluminescence materials. Oxygen vacancies IGZO produced irradiation at ? = 312 nm, free electrons excess yielding conductance increase. Due slow recombination kinetics photogenerated oxygen material can fueled postsynaptic current displays long-lived light-emission (hundreds seconds) ceasing UV irradiation. As proof-of-concept, LAOLETs integrated active-matrix arrays operating visual sensors capable long-lifetime green-light emission irradiated regions.